产品介绍
二硫化锡晶体 2H-SnS2(Tin Sulfide)
晶体尺寸:~8毫米
电学性能:半导体(~ 2.2ev)
晶体结构:六边形
晶胞参数:a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a 2H phase Tin Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4
Stoichiometric analysis of a single crystal 2H-SnS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.
Powder X-ray diffraction (XRD) of a single crystal 2H-SnS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
供应商
银牌会员 第13年