用户论文(2003)：利用I-Z曲线的STM“接触”模式的电学测量和表面改性研究

【中文摘要】 利用STM对金属有机络合物电双稳材料Ag TCNQ薄膜进行电学性质的表征与改性 ,在针尖强电场的作用下 ,当电压达到某一阈值后薄膜从高阻态跃迁至低阻态 ,这两种高低阻态分别定义为一个存储单元的“0”与“1”状态。本文考虑到在STM的常规恒流工作模式下 ,针尖与样品之间的隧道结对于电学性质的表征与改性具有影响。为此测量隧道电流It 对隧道结宽度Z的依赖关系I Z曲线 ,从而确定针尖刚好接触样品的接触点 ,利用STM进行了针尖与样品“接触式”的电学测量和表面电学改性研究 ,并与常规工作模式进行了比较 【英文摘要】 Characterization and surface modification of electric property have been carried out on the organmetallic complex Ag-TCNQ thin film by scanning tunneling microscope (STM). The resistance of an organmetallic complex Ag-TCNQ thin film will be changed from a high resistance state to a low resistance state when the bias voltage between the tip of STM and the bottom electrode was in excess of a certain threshold voltage. The two states can be defined as “0” and “1” of a memory unit respectively. In order to avoi...