用户论文(2004)：直流电沉积CdS纳米线的研究

【中文摘要】 在磷酸溶液中,采用二次铝阳极氧化法得到了多孔铝阳极氧化膜(AAO).以AAO为模板,选用直流电沉积方法在孔内组装CdS半导体纳米线,溶去模板后,获得粗细均一、直径约为100nm、长度约为1.5μm的纳米线与AAO模板的孔径一致.该方法在制备过程中,无需对AAO模板进行去除阻挡层、喷金或预镀金属等处理过程,而是直接在纳米孔内电沉积CdS,形成CdS半导体纳米线阵列.该方法工艺简单,操作方便,容易获得半导体CdS的一维纳米材料.TEM和XRD测试结果表明,CdS纳米线为六方晶型结构.对CdS纳米线的生长机理还进行了初步的分析和探讨. 【英文摘要】 CdS nanowires have been prepar ed by DC electrodeposition in porous anodic aluminum oxide template, which is prod uced by DC anodic oxidation in the solution of phosphoric acid. These nanowires have uniform diameters of about 100 nm and lengths up to 1.5 μm after dissol ve template. Without dissolving the barrier layer and depositing metal film dur ing preparation of AAO, CdS nanowires have been prepared by DC electrodepositio n in holes of AAO template. This preparation is simple, therefore acquirab...