用户论文(2005)：CdZnTe晶片表面化学抛光研究

【中文摘要】 采用不同浓度的B r2-M eOH作为抛光液对CdZnTe进行化学抛光,发现用2%B r2-M eOH腐蚀时速率平稳且易于控制,能有效去除表面划痕,获得光亮表面。AFM分析发现,抛光后表面粗糙度降低30%,平整度增加。XPS分析发现CdZnTe的(111)Cd极性面变成了富Te非极性表面。PL分析发现表面陷阱态密度降低,表面晶格的完整性增强。 【英文摘要】 Different concentrations of Br_2-MeOH were used for the chemical polishing of CdZnTe(CZT) surface.It was found that the CZT wafer in 2% Br_2-MeOH had a stationary erosion rate and could be easily controlled.The surface scratches were removed and a shiny surface was obtained.Through AFM analysis,it was proved that the chemical polishing could reduce the surface roughness about 30%.XPS analysis found that the(111)Cd polar face became the nonpolar Te rich surface after the chemical polishing.PL analysis showed...