用户论文(2006)：AFM氮化硅纳米探针研制

【中文摘要】 在〈100〉晶向硅片上通过各向异性腐蚀形成作为模板的倒金字塔形尖坑,用LPCVD和PECVD法淀积一层约1μm厚的氮化硅膜,通过等离子刻蚀形成悬臂梁图形,再把抛光玻璃片静电键合到氮化硅膜上,最后把衬底硅片腐蚀掉,带有金字塔形针尖的悬臂梁就暴露出来,从而构成可用于原子力显微镜(AFM)描绘纳米图像的氮化硅纳米探针。对针尖的尖度和氮化硅膜悬臂梁的热应力补偿进行了深入研讨,并报道一种特殊而有效的悬臂梁掩模板图形的新设计。制成的氮化硅纳米探针在原子力显微镜上成功地描绘出了纳米图像,经检测,其Z向偏转检测精度优于10-9量级。 【英文摘要】 Integrated pyramidal pits used as molds are formed on <100> oriented silicon wafer by anisotropic etching. A film of silicon nitride with a thickness about 1 μm is deposited by means of LPCVD and PECVD method. Cantilever is mapped on the film of the silicon nitride by plasma etching. A polished glass chip is electrostatically bonded on the mapped film of the silicon nitride. After the substrate silicon has been etched away the silicon nitride cantilever with a pyramidal tip is exposed, which serves as a nan...