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消耗积分 : 免积分
•Etch rates 2 to 7Å/cycle •Demonstrated results in a-Si, Si, SiO2, MoS2 layer etching •Fast recipe control down to 10ms •ALD-style gas dose delivery using “ALD valves” with 10ms open-close response •Ultra low power operation •Ability to etch in ALE or normal etch mode
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