方案摘要
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检测样本 | |
检测项目 | |
参考标准 |
Plasma based implant systems produce multiple ion species as compared to a beamline implant using a single mass selected ion, such as BF2 +. Similarly, plasma implant produces a distribution of ion energies relative to the nearly monoenergetic ions of a beamline implant. To evaluate the significance of these differences, the ultra shallow junction USJ dopant depth profiles of these two implant techniques are compared with an advanced secondary ion mass spectrometry SIMS profiling technique and a novel diagnostic to measure the “as-implanted” ion mass and energy distributions during the pulse of a plasma implant. The plasma and beamline implants match depth and dose extremely well, consistent with the measured plasma ion characteristics. Additionally, the depth profile effects of plasma pulse timing, relative to the application of the bias voltage pulse, a collisional sheath, and USJ dose loss during device mask removal are explored.
导热测试在石油石化行业中的应用
香烟成分的导热系数测试
北京英格海德:气利用IGA进行气体吸附表征和储氢研究
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