Enhancing the Efficiency of InGaN-based LEDs by Optimizing MOCVD Growth Using AFM and SCM Technologies

2008-06-06 17:07 下载量：73

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To achieve effective control over the optimization of light-emitting diode (LED) device characteristics and performance in epitaxially grown nitride semiconductor materials, the characterization and understanding of local, nanoscale structures is essential. This is especially relevant due to the existence of high densities of point and extended defects in these materials, and the coupling between structure and electronic properties via spontaneous and piezoelectric polarization effects. Single and/or multiple quantum well (MQW) structures have been used as active layers for blue and green LEDs and laser diodes due to their bandgap energy range of 0.7-3.4 eV for InGaN of varying indium composition. To date, the most significant device optical efficiency enhancement has been attributed to the existence of a significant number of deep, localized energy states formed by large indium composition fluctuations in the active region.

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文献贡献者

布鲁克纳米表面仪器部(Bruker Nano Surfaces)

白金会员 | 第20年

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