null检测 | Raman intensity enhancement in silicon-on-insulator substrates by laser-凯戈纳斯仪器商贸（上海）有限公司

方案摘要

方案下载

应用领域
检测样本
检测项目
参考标准

It is shown that Raman intensities of bulk and film in silicon-on-insulator substrates strongly depend on the incident angle of the exciting laser. In a backscattering geometry with perpendicular laser incidence, deflection at particles or atomic force microscopy tips can thereby lead to a selective enhancement of the film signal, which can be misinterpreted as surface/tip enhanced Raman scattering. The authors report strong enhancement effects by scattering at dielectric particles on silicon-on-insulator and silicon substrates as well as smaller effects for deflection at tips. In evaluating field enhancements on such substrates, this must be considered.

方案下载

上一篇 PTT-显微拉曼-石墨烯检测

下一篇 In situ Raman Measurements of

文献贡献者

凯戈纳斯仪器商贸（上海）有限公司

银牌会员丨第20年

查看全部资料