Ge Photodiodes - NIR Wavelengths

Ge Photodiodes - NIR Wavelengths

参考价:面议
型号: FDG03
产地: 美国
品牌: Thorlabs
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仪器简介:


FDG03 - Ge Photodiode, 500 ns Rise Time, Ø3 mm Active Area
FDG05 - Ge Photodiode, 800 - 1800 nm, 220 ns Rise Time, 5 mm x 5 mm Active Area
FDG1010 - Ge Photodiode, 3500 ns Rise Time, 10 mm x 10 mm Active Area



技术参数:


Thorlabs stocks a wide selection of discrete photodiodes and calibrated photodiodes. These include Indium Gallium Arsenide (InGaAs), Gallium Phosphide (GaP), Silicon (Si), and Germanium (Ge) photodiodes, as well as Quadrant and Dual-Band photodiodes. The FGA20 provides high responsivity from 1200-2600 nm, allowing detection of wavelengths beyond the normal 1800 nm range of typical InGaAs photodiodes. In addition, we have a large variety of sockets available for all of our photodiodes.



主要特点:

Ge Photodiodes Feature:


Large Active Area: Ø5.00 mm
Ideal for Pulsed and CW Sources
Package Size: 0.275" x 0.310"
800 - 1800 nm Spectral Range
AR Coated for 1300 - 1550 nm

 

瞬渺科技(香港)有限公司为您提供ThorlabsGe Photodiodes - NIR WavelengthsFDG03,ThorlabsFDG03产地为美国,属于激光产品,除了Ge Photodiodes - NIR Wavelengths的参数、价格、型号、原理等信息外,还可为您提供更多激光产品,瞬渺科技客服电话400-860-5168转1545,售前、售后均可联系。

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瞬渺科技(香港)有限公司为您提供ThorlabsGe Photodiodes - NIR WavelengthsFDG03,ThorlabsFDG03产地为美国,属于激光产品,除了Ge Photodiodes - NIR Wavelengths的参数、价格、型号、原理等信息外,还可为您提供更多激光产品,瞬渺科技客服电话400-860-5168转1545,售前、售后均可联系。
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