基于二氧化硅衬底的全区域覆盖的单层二硫化钼

基于二氧化硅衬底的全区域覆盖的单层二硫化钼

参考价:¥6979
供货周期: 一周
品牌: 2D SEMICONDUCTOR
货号: 4602891
上海巨纳科技有限公司
银牌会员13年生产商
关注展位 全部耗材
产品详情

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity.



Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

Thermal oxide (SiO2/Si) substrates

Coverage

Full Coverage Monolayer

Electrical properties

1.85 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.313 nm, c = 1.230 nm,

α = β = 90°, γ = 120°

Production method

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS

Specifications

1)    Identification. Full coverage 100% monolayer MoS2 uniformly covered across SiO2/Si substrates.

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.2 nm.

4)    Uniformity. Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.

9)    Defect profile. MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.


Supporting datasets [for 100% Full area coverage on SiO2/Si]



Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers


Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios


Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.


相关产品

基于二氧化硅衬底的全区域覆盖的单层二硫化钼由上海巨纳科技有限公司为您提供,如您想了解更多关于基于二氧化硅衬底的全区域覆盖的单层二硫化钼价格、规格、特点、分类选择等信息,欢迎咨询厂家。除供应基于二氧化硅衬底的全区域覆盖的单层二硫化钼外,还可为您提供硅基底石墨烯薄膜(1*1cm) 、基于SiO2/Si晶片的双层CVD石墨烯薄膜(4片装) 、GO 氧化石墨烯 (Graphene Oxide) 等耗材,公司有专业的客户服务团队,是您值得信赖的合作伙伴,上海巨纳客服电话。
Business information
工商信息 信息已认证
contact us
联系方式

详细地址

上海市虹口区宝山路778号海伦国际大厦5楼
当前位置: 上海巨纳 耗材 基于二氧化硅衬底的全区域覆盖的单层二硫化钼

关注

拨打电话

留言咨询