供货周期: | 现货 |
品牌: | 完美光子 |
光电二极管(PIN)
筱晓光子供应光电二极管(PIN),用于将光信号转换为电信号,形成光电效应/光电池。PIN 光电二极管应用广泛,包括: 安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。
UV/blue sensitive photodiodes | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 5V | 410nm 5V 50Ω |
mm | mm2 | nA | ns | ||
PS1-2 | TO52 | 1.0x1.0 | 1 | 0.01 | 50 |
PS1-2 | LCC6.1 | 1.0x1.0 | 1 | 0.01 | 50 |
PC5-2 | TO5 | ? 2.52 | 5 | 0.3 | 150 |
PS7-2 | TO5 | 2.66x2.66 | 7 | 0.4 | 200 |
PC10-2 | TO5 | ? 3.57 | 10 | 1 | 300 |
PS13-2 | TO5 | 3.5x3.5 | 13 | 1 | 300 |
PS33-2 | TO8 | 5.7x5.7 | 33 | 2 | 600 |
PC50-2 | BNC | ? 7.98 | 50 | 5 | 1000 |
PS100-2 | BNC | 10x10 | 100 | 10 | 2000 |
PS100-2 | CERpin | 10x10 | 100 | 10 | 2000 |
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm | |||||
Blue/green sensitive photodiodes | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 5V | 410nm 5V 50Ω |
mm | mm2 | nA | ns | ||
PC1-6b | TO52S3 | ? 1.13 | 1 | 0.05 | 10 |
PC5-6b | TO5 | ? 2.52 | 5 | 0.1 | 20 |
PS7-6b | TO5 | 2.7x2.7 | 7 | 0.15 | 25 |
PC10-6b | TO5 | ? 3.57 | 10 | 0.2 | 45 |
PS13-6b | TO5 | 3.5x3.5 | 13 | 0.25 | 50 |
PS33-6b | TO8 | 5.7x5.7 | 33 | 0.6 | 140 |
PS100-6b | CERpin | 10x10 | 100 | 1 | 200 |
PS100-6b | LCC10S | 10x10 | 100 | 1 | 200 |
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm | |||||
High speed photodiodes (for fast rise times at low reverse voltages) | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 20V | 850nm 20V 50Ω |
mm | mm2 | nA | ns | ||
PS0.25-5 | LCC6.1 | 0.5x0.5 | 0.25 | 0.1 | 0.4 |
PS0.25-5 | TO52S3 | 0.5x0.5 | 0.25 | 0.1 | 0.4 |
PC0.55-5 | TO52S1 | ? 0.84 | 0.55 | 0.2 | 1 |
PC0.55-5 | LCC6.1 | ? 0.84 | 0.55 | 0.2 | 1 |
PS1-5 | LCC6.1 | 1.0x1.0 | 1 | 0.2 | 1.5 |
PS1-5 | TO52S3 | 1.0x1.0 | 1 | 0.2 | 1.5 |
PS7-5 | TO5 | 2.7x2.7 | 7 | 0.5 | 2 |
PS11.9-5 | TO5 | 3.45x3.45 | 11.9 | 1 | 3 |
PC20-5 | TO8 | ? 5.05 | 20 | 2 | 3.5 |
PS33-5 | TO8 | 5.7x5.7 | 33 | 2 | 3.5 |
PS100-5 | CERpinS | 10x10 | 100 | 2 | 5 |
PS100-5 | LCC10S | 10x10 | 100 | 2 | 5 |
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components) | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 20V | 850nm 20V 50Ω |
mm | mm2 | nA | ns | ||
PS0.25-5t | LCC6.1 | 0.5x0.5 | 0.25 | 1 | 0.4 |
PC0.55-5t | LCC6.1 | ? 0.84 | 0.55 | 5 | 1 |
PC0.55-5t | T1 3/4 | ? 0.84 | 0.55 | 5 | 1 |
PC0.55-5t | T1 3/4 black | ? 0.84 | 0.55 | 5 | 1 |
PS1-5t | LCC6.1 | 1.0x1.0 | 1 | 1 | 1 |
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection) | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 10V | 850nm 10V 50Ω |
mm | mm2 | nA | ns | ||
PC1-6 | TO52S1 | ? 1.13 | 1 | 0.05 | 10 |
PC1-6 | TO52S3 | ? 1.13 | 1 | 0.05 | 10 |
PC5-6 | TO5 | ? 2.52 | 5 | 0.1 | 13 |
PS7-6 | TO5 | 2.66×2.66 | 7 | 0.1 | 15 |
PC10-6 | TO5 | ? 3.57 | 10 | 0.2 | 20 |
PS13-6 | TO5 | 3.5×3.5 | 13 | 0.2 | 20 |
PC20-6 | TO8 | ? 5.05 | 20 | 0.3 | 25 |
PC50-6 | TO8S | ? 7.98 | 50 | 0.5 | 30 |
PS100-6 | BNC | 10×10 | 100 | 0.8 | 50 |
PS100-6 | CERpinS | 10×10 | 100 | 0.8 | 50 |
PS100-6 | LCC10S | 10×10 | 100 | 0.8 | 50 |
IR photodiodes with fully depletable (very low capacitance levels) | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 10V | 905nm 10V 50Ω |
mm | mm2 | nA | ns | ||
PC5-7 | TO8i | ? 2.52 | 5 | 0.05 | 45 |
PC10-7 | TO8i | ? 3.57 | 10 | 0.1 | 50 |
PC20-7 | TO8Si | ? 5.05 | 20 | 0.2 | 50 |
PS100-7 | LCC10 | 10×10 | 100 | 1.5 | 50 |
QP100-7 | LCC10 | 10×10 | 4×25 | 0.5 | 50 |
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources) | |||||
Type No. | Active area | Dark current | Rise time | ||
Chip | Package | Size | Area | 150V | 1064nm 150V 50Ω |
mm | mm2 | nA | ns | ||
QP22-Q | TO8S | ? 5.3 | 4×5.7 | 1.5 | 5 |
QP45-Q | TO8S | 6.7×6.7 | 4×10.96 | 3 | 5 |
QP154-Q | TO1032i | ? 14.0 | 4×38.5 | 10 | 6 |
PIN Series | Optimized for | Special features | Application |
Series-2 | 200-500 nm | UV / Blue enhanced | Analytical instruments, readout for scintillators |
Series-6b | 400-650 nm | Blue / Green enhanced | Photometric illuminometer |
Series-5b | 360-550 nm | High-speed Epitaxy, blue / green enhanced | Optical fiber communication, high speed photometry |
Series-5t | 400-850 nm | High-speed Epitaxy, low voltage (3.5V) | |
Series-5 | 450-950 nm | High-speed Epitaxy | |
Series-6 | 700-950 nm | General purpose, low dark current, fast response | Precision photometry, analytical instruments |
Series-7 | 700-1100 nm | Low capacity, full depletable | High energy physics |
Series-Q | 900-1100 nm | Enhanced NIR sensitivity, low voltage, full depletable | YAG laser detection |
Series-i | 600-1700 nm | InGaAs photodiodes, high IR sensitivity, low dark current | Eye-sate laser detection |
Series-X | Ionizing radiation | With or without scintillator, ultra | Medical, security, material |
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