| 型号： | ELS-F150 |
| 产地： | 日本 |
| 品牌： | ELIONIX INC. |
| 评分： |
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日本Elionix 超高精密电子束光刻系统 ELS-F150
ELS-F150 Ultra High Precision Electron Beam Lithography System
World's highest acceleration voltage electron beam
lithography system
世界上加速电压最高的电子束光刻系统
The ELS-F150 is the world's first 150 kV electron beam lithography system. Expanding upon the ELSF125 base system, the ELS-F150 enables single digit nanoscale device fabrication for advanced research.
ELS-F150是世界上第一个150千伏电子束光刻系统。在ELS-F125基础上展开系统，ELS-F150支持单位纳米级用于高级研究的设备制造。
Main Applications:
主要应用领域
- Quantum dots for quantum computing
-量子点用于量子计算
- Resolution and edge roughness testing for EUV resist
Evaluation
EUV抗蚀剂的分辨率和边缘粗糙度测试评估
- < 10 nm master fabrication and material evaluation for
nanoimprint lithography
< 10nm母版制作和材料评估纳米压印光刻
- T-gate pattern on thick resist for HEMT devices
- HEMT器件厚抗蚀胶上的T-型栅极图案
- Nano gap patterning for bionano sensors
- 用于生物传感器的纳米间隙模式
- Fresnel Zone Plate (FZP) for X-ray gratings
- x射线光栅的菲涅耳带板(FZP)
Key Product Features
关键产品特性
- 4 nm linewidth guaranteed at 150 kV
- 4纳米线宽保证在150千伏
- 1.5 nm beam diameter and minimum proximity effect at 150 kV
- -1.5纳米束直径和最小接近效应在150千伏
- Wider process margin than 125 kV makes it easier to fabricate advanced nanodevices
- -比125千伏更宽的工艺裕度使制造先进的纳米器件更容易
- Single cassette auto-loader as default, supports up to 6 slot multi-cassette auto-loader (option)
-默认单盒自动加载，最多支持6槽多盒自动加载(可选)
High Throughput and Uniformity
高通量和均匀性
- Superior fine line writing:
-卓越的细线条书写:
3 nm line width at 50 nm pitch using commercially available resist
3nm线宽，50 nm间距，使用商用抗蚀剂
User-friendly Interface
友好的用户界面
[CAD and SEM interfaces on Windows]
CAD和SEM界面在Windows上
- Easy pattern design function
- -简单的图案设计功能
- Easy control of beam condition
- -易于控制电子束的条件
Specification规格
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