雪崩二极管
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雪崩二极管

报价 ¥400

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新势力光电

型号

First sensor

产地

欧洲德国

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杭州新势力光电技术有限公司

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雪崩二极管(APD)

 



新势力光电供应雪崩二极管(APD)，是一种内部增益机制的光电二极管。根据具体应用，可以选择：蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。

PIN Series
Special features for Applications
Series-11 Optimized for 360-560nm
Blue enhanced for analytical instruments, readout for scintillators.
Series-12 Optimized for 500-750nm
Flat frequency response up to 3GHz for precise distance meas., communication.
Series-8 Optimized for 750-820nm
High-speed for resistance meas., laser scanner, high speed applications.
Series-9 Optimized for 750-930nm
Low rise time for laser rangefinder, LIDAR, basic technology for arrays.
Series-10 Optimized for 860-1100nm
Sensitivity at 1064nm for range finder, laser tracker, LIDAR.

Series 11: Blue sensitivity enhanced (for biomedical applications)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
410nm 50Ω
mm
mm2
nA
ns
AD800-11
TO52S1
Ø0.8
0.5
1
1
AD1900-11
TO5i
Ø1.95
3
5
2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Type No.
Active area
Spectral Responsivity
Cut-off frequency
Chip
Package
Size
Area
660nm M=100
660nm 50Ω
mm
mm2
A/W
GHz
AD100-12
LCC6.1
Ø0.1
0.008
50
typ. 3, min. 2
AD100-12
LCC6.1f
Ø0.1
0.008
44
typ. 3, min. 2
AD100-12
TO52S1
Ø0.1
0.008
50
typ. 3, min. 2
AD230-12
LCC6.1
Ø0.23
0.042
50
typ. 3, min. 2
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ. 3, min. 2
AD230-12
TO52S1
Ø0.23
0.042
50
typ. 3, min. 2
AD500-12
LCC6.1
Ø0.5
0.196
50
typ. 3, min. 2
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ. 3, min. 2
AD500-12
TO52S1
Ø0.5
0.196
50
typ. 3, min. 2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
M=100 20V 50Ω
mm
mm2
nA
ns
AD100-8
LCC6.1
Ø0.1
0.008
0.05
<0.18
AD100-8
LCC6.1f
Ø0.1
0.008
0.05
<0.18
AD100-8
TO52S1
Ø0.1
0.008
0.05
<0.18
AD100-8
TO52S3
Ø0.1
0.008
0.05
<0.18
AD230-8
LCC6.1
Ø0.23
0.04
0.3
0.18
AD230-8
LCC6.1f
Ø0.23
0.04
0.3
0.18
AD230-8
TO52S1
Ø0.23
0.04
0.3
0.18
AD230-8
TO52S3
Ø0.23
0.04
0.3
0.18
AD500-8
LCC6.1
Ø0.5
0.2
0.5
0.35
AD500-8
LCC6.1f
Ø0.5
0.2
0.5
0.35
AD500-8
TO52S1
Ø0.5
0.2
0.5
0.35
AD500-8
TO52S2
Ø0.5
0.2
0.5
0.35
AD500-8
TO52S3
Ø0.5
0.2
0.5
0.35
AD800-8
TO52S1
Ø0.8
0.5
2
0.7
AD1100-8
TO52S1
Ø1.13
1
4-6
1
AD1900-8
TO5i
Ø1.95
3
15
1.4
AD3000-8
TO5i
Ø3
7.07
30
2
AD5000-8
TO8i
Ø5
19.63
60
3
AD230-8-2.3G
TO5
AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
AD500-8-1.3G
TO5
AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
M=100
mm
mm2
nA
ns
AD230-9
LCC6.1
Ø0.23
0.04
0.5
0.5
AD230-9
LCC6.1f
Ø0.23
0.04
0.5
0.5
AD230-9
TO52S1
Ø0.23
0.04
0.5
0.5
AD230-9
TO52S1F2
Ø0.23
0.04
0.5
0.5
AD230-9
TO52S3
Ø0.23
0.04
0.5
0.5
AD500-9
LCC6.1
Ø0.5
0.2
0.8
0.55
AD500-9
LCC6.1f
Ø0.5
0.2
0.8
0.55
AD500-9
TO52S1
Ø0.5
0.2
0.8
0.55
AD500-9
TO52S1F2
Ø0.5
0.2
0.8
0.55
AD500-9
TO52S2
Ø0.5
0.2
0.8
0.55
AD500-9
TO52S3
Ø0.5
0.2
0.8
0.55
AD800-9
TO52S1
Ø0.8
0.5
2
0.9
AD1100-9
TO52S1
Ø1.13
1
4
1.3
AD1500-9
TO5i
Ø1.5
1.77
2
2
AD3000-9
TO5i
Ø3
7.07
30
2
AD5000-9
TO8i
Ø5
19.63
60
3
AD230-9-400M
TO5
AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
AD500-9-400M
TO5
AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
Multi-Element Array
8AA0.4-9
SOJ22GL
APD Array 8 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm with NTC
16AA0.13-9
DIL18
APD Array 16 Elements, QE>80% at 760-910nm
16AA0.4-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm
25AA0.04-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
25AA0.16-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
64AA0.04-9
BGA
APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
M=100
M=100 1064nm 50Ω
mm
mm2
nA
ns
AD500-10
TO5i
Ø0.5
0.2
1.5
4
AD800-10
TO5i
Ø0.8
0.5
3
5
AD1500-10
TO5i
Ø1.5
1.77
7
5
AD4000-10
TO8Si
Ø4
12.56
50
6
AD800-10
TO8Si
High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)
Multi-Element Array
QA4000-10
TO8Si
Quadrant Avalanche Photodiode, High QE at 850-1070nm


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