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760 nm Laser Diode
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Facets passivated to withstand high power
without catastrophic optical damage (COD)Epi designed for high reliability
Features
Wavelength tunable across several lines of the O2 spectrum
around 760nmPulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Description
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. The 760 nm Laser Diode is designed specifically for O2 detection.
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and
wrist strap must be used. Always store in an antistatic container with all
leads shorted togethe
How To Order
Part number example: PH760DBR040CM. Assign optical power from those available. Use a
three-digit format for all power entries. Call factory for special frequency selection and certification to certain atomic absorption lines.
Package Type
(CS) Chip on Submount
(CM) ‘C’ Mount
(T8) TO-8
Minimum Power (mW)
040 080
3年
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有
0
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