仪器对比
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霍尔效应传感器可为科学研究、医疗健康、航空航天和工业应用提供高性能的模拟磁场测量。
Figure 1. sensor on test assembly
产品特点:
• 超高分辨率
• 超低噪音性能
• 可在极低温条件下使用
• 大动态范围
• 高线性
• 超低功耗运行
简述:
利用石墨烯固有的低噪声特性，无需信号调节即可提供出色的场分辨率。石墨烯的二维性质 很大程度地降低了平面霍尔效应，并且石墨烯的稳定性和电子 迁移率提供了 超强的温度和磁场工作范围。
应用包括：
• 精密磁场测量
• 场梯度和边缘场的精确映射
• 高精度位置，旋转和速度感应
• 低温下的超低功率场测量
产品优点:
可满足各种应用需求。可以利用的优点包括：
• 可以在 < 1.8 K - 353 K的极端温度下运行
• 在大磁场范围(> 9 T)内ppb磁场变化的分辨率
• 低至 10 nA的工作电流，节省了功率，仅产生5 pW的散热
• 平面霍尔效应可忽略不计，有助于精确地确定仪器的摆放位置场方向
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性能特点:
Parameter | Symbol | Value (typical) | Unit | Notes |
Maximum operating temperature range | T | 1.8 to 353 | K | Performance guaranteed within this range. Operation <1.8 K is possible |
Measurable field range | B | >+/- 9 | T | See Fig.2. At 1.8K, 0-9 T is possible with reduced linearity |
Open Circuit Sensitivity | S | 1100 | V/AT | @ room temperature. see Fig 3 for change with temperature |
Open Circuit Hall Voltage | VH | 110 | mV | I=IN and B=1 T, increases with reducing temperature |
Spectral Noise Density |
SDT | 7 |
μ???√???? | 10 Hz, 2 VRMS (equivalent to I=IN) |
0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) | |||
0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) | |||
0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) | |||
Resolution, based on SDT on a 1 T field |
RSND | 7 |
ppm | 10 Hz, 2 VRMS (equivalent to I=IN) |
0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) | |||
0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) | |||
0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) | |||
RMS noise | ??T2? | 40 | ?T | 0.1 – 10 Hz, 2 VRMS (equivalent to I=IN) |
28 | 10 – 100 kHz, 2 VRMS (equivalent to I=IN) | |||
Linearity of Hall Voltage % of full scale | FL | <0.5 | % | -1 to 1 T. See Fig 2 for full 0-9 T range |
Corrected Linearity | <0.01 | % | -1 to 1 T, after 3rd order correction | |
Planar Hall Effect | HPL | <10 | μT | At I=IN , 1 T |
Nominal Supply Current | IN | 0.1 | mA | Can be operated down to I=10 nA |
Maximum Supply Current | Imax | 1 | mA | |
Supply Side Internal Resistance | RIN | 22 | k? | B=0 T |
Hall Side Internal Resistance | ROUT | 22 | k? | B=0 T |
Offset Voltage |
VR0 | 8 | mV | Typical offset voltage at I=IN and B=0 T |
0.6 | mV | Min offset voltage at I=IN and B=0 T | ||
34 | mV | Max offset voltage at I=IN and B=0 T | ||
Temperature Coefficient of Sensitivity | TCS | -4.7 | V/AT/K | @ room temperature, IN |
高场和低温性能
Figure 2. Hall Voltage output at 295 K, from 0 to 9 T
Figure 3. Sensitivity as a function of temperature from 1.8 K to 300 K. Measured at 1T.
封装信息
有效面积：1.3 x 1.3 mm 位于封装的中心封装类型: 20-pin LCC, 陶瓷,无镍, 表面贴焊。
Pin | Notes | |
VIN+ | 1 or 11 | Input voltage can be supplied with either polarity |
VIN- | 11 or 1 | |
VH+ | 6 or 16 | Hall voltage polarity will depend on VIN polarity and field polarity |
VH- | 16 or 6 |
1年
否
有
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