硒化铟晶体（99.995%） In2Se3(Indium Selenide)_价格

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硒化铟晶体 In2Se3(Indium Selenide)
晶体尺寸：8-10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18

Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).

硒化铟晶体（99.995%） In2Se3(Indium Selenide)信息由上海巨纳科技有限公司为您提供，如您想了解更多关于硒化铟晶体（99.995%） In2Se3(Indium Selenide)报价、型号、参数等信息，欢迎来电或留言咨询。除供应硒化铟晶体（99.995%） In2Se3(Indium Selenide)外，上海巨纳科技有限公司还可为您提供其他等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。

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供货周期：	一周
品牌：	HQ Graphene
货号：	4601740