电学性能：半导体，拓扑绝缘体，热电性
晶体结构：六边形
晶胞参数：a = b = 0.425nm，C = 3.048nm，α=β= 90°γ= 120
晶体类型：合成
晶体纯度：＞99.995%
表征方法：XRD、拉曼、EDX
X-ray diffraction on a Sb2Te3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 7 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24
Powder X-ray diffraction (XRD) of a single crystal Sb2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal Sb2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal Sb2Te3. Measurement was performed with a 785 nm Raman system at room temperature.
