ZrS3 三硫化锆晶体

ZrS3 三硫化锆晶体

参考价:¥7030
供货周期: 一周
品牌: 2D SEMICONDUCTOR
货号: 4600955
上海巨纳科技有限公司
银牌会员13年生产商
关注展位 全部耗材
产品详情

Environmentally stable anisotropic transition metal trichalcogenide material ZrS3 is available at 2Dsemiconductors USA. ZrS3 is a layered material like MoS2 and other layered systems, except that it exhibits highly anisotropic crystalline structure and material properties (Like ReS2 or TiS3). The presence of the crystalline anisotropy results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment. Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

Crystal size ~ 0.4-0.6 cm

Material characteristics

Thermoelectric IR semiconductor
High carrier mobility semiconductor
2D anisotropic semiconductor
2D Catalytic material


Related literature

Single layer of MX3 (M = Ti, Zr; X = S, Se, Te): A new platform for nano-electronics and optics; Phys.Chem.Chem.Phys.,2015, 17, 18665

Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets; Nanoscale, 2017,9, 4175-4182


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