GeSe 硒化锗晶体 (Germanium Selenide)_价格

产品详情

Our single crystal GeSe (Germanium selenide) crystals come with guaranteed optical, electronic, and structural anisotropy. GeSe crystals are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.
GeSe Characteristics

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.

GeSe 硒化锗晶体 (Germanium Selenide)信息由上海巨纳科技有限公司为您提供，如您想了解更多关于GeSe 硒化锗晶体 (Germanium Selenide)报价、型号、参数等信息，欢迎来电或留言咨询。除供应GeSe 硒化锗晶体 (Germanium Selenide)外，上海巨纳科技有限公司还可为您提供其他等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。

供货周期：	一周
品牌：	2D SEMICONDUCTOR
货号：	4601586