| 供货周期： | 一周 |
| 品牌： | 2D SEMICONDUCTOR |
| 货号： | 4601000 |
Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. In the bulk form GeS is 1.65 eV indirect band gap semiconductor. Displays remarkable and unusual optical, mechanical, and electrical properties in the monolayers. Monolayer GeS remains unknown by the scientific community and waiting to be discovered. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.
GeS characteristics
相关产品
GO 氧化石墨烯 (Graphene Oxide)
Carboxyl Graphene 羧基石墨烯
Graphene Fluoride 氟化石墨烯
PMMA涂层/预处理石墨烯（进口）
PET基底石墨烯（进口） Graphene on PET
铜基石墨烯薄膜（5*5cm）
铜基石墨烯薄膜（10*10cm）
PET基底石墨烯薄膜（1*1cm）
硅基底石墨烯薄膜（1*1cm）
基于SiO2/Si晶片的双层CVD石墨烯薄膜（4片装）
基于SiO2/Si晶片的双层CVD石墨烯薄膜（8片装）
Monolayer Black Phosphorus Solution 单层黑磷溶液
PtSe2 二硒化铂晶体 (Platinum Diselenide)
白云母（1片装） MICA muscovite V1
白云母（5片装） MICA muscovite V1
关注
拨打电话
留言咨询
