A Van Der Waals Homojunction Ideal p–n Diode Behavior in MoSe 2

2017-12-18 11:20  下载量:1

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使用Nanobase公司Xperam共焦拉曼光谱仪进行 MoSe2测量研究。 compared to the heterojunction in terms of diodecharacteristics, e.g., more effi cient current rectifi cation andphotovoltaic response, since the interface of the homojunctionwith continuous band alignments possess smaller carrier trapsites than that of the heterojunctions. Nevertheless, onlyvertical vdW heterojunction devices have been realized so far,

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