钾原子770nm冷却管，770nm窄线宽激光管_价格_筱晓（上海）光子技术有限公司

产品详情

770 nm Laser Diode

Technology

DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability

Features

Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency

Description

The PH770DBR Series of high-power edge-emitting lasers are based on Photodigm’s
advanced single-frequency laser technology. It provides a diffraction limited,
single lateral and longitudinal mode beam. Facets are passivated for high-power
reliability. Applications of the 770 nm Laser Diode include spectroscopy for potassium-based application.

Absolute Maximum Rating

1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC = 25°C unless otherwise specified

1/ Butterfly package 2/ TO-8 package

Handling Precautions

These devices are sensitive to ESD. When handling the module, grounded work area and
wrist strap must be used. Always store in an antistatic container with all leads shorted together.

How To Order

Part number example: PH770DBR080CM. Assign optical power from those shown below. Use a
three-digit format for all power entries. Call factory for special performance selection and certification to certain atomic absorption lines. Butterfly package is offered only at 50% of output powers shown, and is not recommended for Spectroscopy applications. (see application note titled Optical Feedback)

Package Type

(CS) Chip on Submount

(CM) ‘C’ Mount

(T8) TO-8

(BF) Butterfly

Minimum Power (mW)

020 040

080

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供货周期：	一周
品牌：	Photodigm