Photodigm785nm拉曼激光管_价格_筱晓（上海）光子技术有限公司

产品详情

785 nm Laser Diode

Technology

DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability

Features

Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency

Description

The PH785DBR Series of high-power edge-emitting lasers are based on Photodigm’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications for the 785 nm laser diode include Raman spectroscopy and optical storage.

Absolute Maximum Rating

1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC = 25°C unless otherwise specified

/ Butterfly package 2/ TO-8 package

Handling Precautions

These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.

How To Order

Part number example: PH785DBR080CM. Assign optical power from those available shown below.
Use a three-digit format for all power entries. Call factory for special performance selection and certification to certain atomic absorption lines. Butterfly package is offered only at 50% of output powers shown, and is not recommended for spectroscopy applications. See Photodigm’s application note titled Optical Feedback

Package Type

(CS) Chip on Submount

(CM) ‘C’ Mount

(T8) TO-8

(BF) Butterfly

Minimum Power (mW)

040 120

080 180

Photodigm785nm拉曼激光管信息由筱晓（上海）光子技术有限公司为您提供，如您想了解更多关于Photodigm785nm拉曼激光管报价、型号、参数等信息，欢迎来电或留言咨询。除供应Photodigm785nm拉曼激光管外，筱晓（上海）光子技术有限公司还可为您提供其他等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。

供货周期：	一周
品牌：	Photodigm