雪崩二极管(APD) 新势力光电供应雪崩二极管(APD),是一种内部增益机制的光电二极管。根据具体应用,可以选择:蓝光增强型、红光增强型、红外增强型(900nm、1064nm)。雪崩二极管广泛应用于:安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。PIN SeriesSpecial features for ApplicationsSeries-11 Optimized for 360-560nmBlue enhanced for analytical instruments, readout for scintillators.Series-12 Optimized for 500-750nmFlat frequency response up to 3GHz for precise distance meas., communication.Series-8 Optimized for 750-820nmHigh-speed for resistance meas., laser scanner, high speed applications.Series-9 Optimized for 750-930nmLow rise time for laser rangefinder, LIDAR, basic technology for arrays.Series-10 Optimized for 860-1100nmSensitivity at 1064nm for range finder, laser tracker, LIDAR.Series 11: Blue sensitivity enhanced (for biomedical applications)Type No.Active areaDark currentRise timeChipPackageSizeAreaM=100410nm 50&Omega mmmm2nAnsAD800-11TO52S1Ø 0.80.511AD1900-11TO5iØ 1.95352Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)Type No.Active areaSpectral ResponsivityCut-off frequencyChipPackageSizeArea660nm M=100660nm 50&Omega mmmm2A/WGHzAD100-12LCC6.1Ø 0.10.00850typ. 3, min. 2AD100-12LCC6.1fØ 0.10.00844typ. 3, min. 2AD100-12TO52S1Ø 0.10.00850typ. 3, min. 2AD230-12LCC6.1Ø 0.230.04250typ. 3, min. 2AD230-12LCC6.1fØ 0.230.04244typ. 3, min. 2AD230-12TO52S1Ø 0.230.04250typ. 3, min. 2AD500-12LCC6.1Ø 0.50.19650typ. 3, min. 2AD500-12LCC6.1fØ 0.50.19644typ. 3, min. 2AD500-12TO52S1Ø 0.50.19650typ. 3, min. 2Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)Type No.Active areaDark currentRise timeChipPackageSizeAreaM=100M=100 20V 50&Omega mmmm2nAnsAD100-8LCC6.1Ø 0.10.0080.050.18AD100-8LCC6.1fØ 0.10.0080.050.18AD100-8TO52S1Ø 0.10.0080.050.18AD100-8TO52S3Ø 0.10.0080.050.18AD230-8LCC6.1Ø 0.230.040.30.18AD230-8LCC6.1fØ 0.230.040.30.18AD230-8TO52S1Ø 0.230.040.30.18AD230-8TO52S3Ø 0.230.040.30.18AD500-8LCC6.1Ø 0.50.20.50.35AD500-8LCC6.1fØ 0.50.20.50.35AD500-8TO52S1Ø 0.50.20.50.35AD500-8TO52S2Ø 0.50.20.50.35AD500-8TO52S3Ø 0.50.20.50.35AD800-8TO52S1Ø 0.80.520.7AD1100-8TO52S1Ø 1.1314-61AD1900-8TO5iØ 1.953151.4AD3000-8TO5iØ 37.07302AD5000-8TO8iØ 519.63603AD230-8-2.3GTO5AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.AD500-8-1.3GTO5AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)Type No.Active areaDark currentRise timeChipPackageSizeAreaM=100M=100mmmm2nAnsAD230-9LCC6.1Ø 0.230.040.50.5AD230-9LCC6.1fØ 0.230.040.50.5AD230-9TO52S1Ø 0.230.040.50.5AD230-9TO52S1F2Ø 0.230.040.50.5AD230-9TO52S3Ø 0.230.040.50.5AD500-9LCC6.1Ø 0.50.20.80.55AD500-9LCC6.1fØ 0.50.20.80.55AD500-9TO52S1Ø 0.50.20.80.55AD500-9TO52S1F2Ø 0.50.20.80.55AD500-9TO52S2Ø 0.50.20.80.55AD500-9TO52S3Ø 0.50.20.80.55AD800-9TO52S1Ø 0.80.520.9AD1100-9TO52S1Ø 1.13141.3AD1500-9TO5iØ 1.51.7722AD3000-9TO5iØ 37.07302AD5000-9TO8iØ 519.63603AD230-9-400M TO5AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.AD500-9-400MTO5AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.Multi-Element Array8AA0.4-9SOJ22GLAPD Array 8 Elements, QE80% at 760-910nm with NTC16AA0.13-9SOJ22GLAPD Array 16 Elements, QE80% at 760-910nm with NTC16AA0.13-9DIL18APD Array 16 Elements, QE80% at 760-910nm16AA0.4-9SOJ22GLAPD Array 16 Elements, QE80% at 760-910nm25AA0.04-9BGAAPD Array 25 (5× 5) elements, QE80% at 760-910nm with PTC25AA0.16-9BGAAPD Array 25 (5× 5) elements, QE80% at 760-910nm with PTC64AA0.04-9BGAAPD Array 64 (8× 8) elements, QE80% at 760-910nm with PTCSeries 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)Type No.Active areaDark currentRise timeChipPackageSizeAreaM=100M=100 1064nm 50&Omega mmmm2nAnsAD500-10TO5iØ 0.50.21.54AD800-10TO5iØ 0.80.535AD1500-10TO5iØ 1.51.7775AD4000-10TO8SiØ 412.56506AD800-10TO8SiHigh speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)Multi-Element ArrayQA4000-10TO8SiQuadrant Avalanche Photodiode, High QE at 850-1070nm相关商品光电二极管(PIN) 铟镓砷探测器(InGaAs) 光电管放大器 光电管接收模块
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