1应用范围:研究半导体器件和半导体材料电学特性、精密测量半导体材料的载流子浓度、迁移率、电阻率、霍尔系数等重要参数 2规 格: 2-1Maximum sample size (Small board) - 15mm x15mm最大样品尺寸:15mm x15mm (可定制) 2-2Measurement Temperature: 300K (room temperature), optional 77K.测试温度: 室温、可选配液氮低温77K 2-3Measurement Material: Semiconductors material such as Si, SiGe, SiC,GaAs, InGaAs, InP, GaN, ITO (N Type & P Type)测试材质:半导体类材质、如: Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN, ITO等所有半导体薄膜(P型和N型) 2-4Magnet Flux Density: 0.68 Tesla nominal ± 1% of marked value磁场强度: 0.68 Tesla ± 1% 2-5Magbnet Stability: ± 2% over 1 years稳定性: ± 2% (一年后) 2-6Uniformity: ± 1% over 20mm diameter from center均匀度:± 1%(20mm直径圆范围内) 2-7Pole Gap: 20 mm磁极间隙:20毫米 2-8Input voltage range: 1&mu V to 300V输入电压范围:1&mu V ~300V 2-9Hall voltage range: 10uV to 2000mV霍尔电压范围: 10uV to 2000mV 2-10Resistivity (Ohm.cm): 10-5 to 107电阻率 (&Omega .㎝): 10-5 to 107 2-11Mobility (cm2/Volt.sec): 1 ~ 107迁移率(cm2/Volt.sec): 1 ~ 107 2-12Carrier Density (cm-3): 107 ~ 1021载流子浓度(1/cm3): 107 ~ 1021
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