硒化锗晶体(99.995%) GeSe (Germanium Selenide)
硒化锗晶体 GeSe (Germanium Selenide)晶体尺寸:~10毫米电学性能:半导体晶体结构:斜方晶系晶胞参数:a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°晶体类型:合成晶体纯度:>99.995%X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX). Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.