硫化镓晶体(99.995%) GaS(Gallium Sulfide)
硫化镓晶体 GaS(Gallium Sulfide)晶体尺寸:~10毫米电学性能:半导体晶体结构:六边形晶胞参数:a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°晶体类型:合成晶体纯度:>99.995% X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.