ZrSe3 三硒化锆晶体
Zirconium triselenide belongs to the group-IV transition metal trichalcogenides. This is the only commercially available ZrSe3 crystals in the market, and our crystals have been engineered to attain rather low record defect density (1E9-1E10cm-2) to yield environmentally stable ZrSe3 crystals. ZrSe3 crystals exhibit semimetallic behavior with charge density waves (CDW) phenomena and even possess a superconducting response at low temperatures. ZrSe3 behaves semiconducting as well as metallic depending on the physical thickness of the material, and exhibit CDWs. Recent studies have proposed ZrSe3 as fermoelectric [1], high carrier mobility 2D transistors [2], new IR material [3-4], as well as polarized emission material [4]. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers.Growth method matters Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.Properties of CDW ZrSe3 crystalsRelated literature[1] "ZrSe3-Type Variant of TiS3: Structure and Thermoelectric Properties" Chem. Mater., 2014, 26 (19), pp 5585–5591 [2] "Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility" Angew Chem Int Ed Engl. 2015 Jun 22 54(26):7572-6 [Link][3] Single layer of MX3 (M = Ti, Zr X = S, Se, Te): A new platform for nano-electronics and optics Phys.Chem.Chem.Phys.,2015, 17, 18665[4] Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets Nanoscale, 2017,9, 4175-4182