BATOP激光芯片1064nm(Microchip)品牌: BATOP型号: MC BATOP GmbH成立于2003年,是一家隶属于德国耶拿大学的私人创新型公司。BATOP从事的专业领域包括:低温分子束外延技术,介质溅射镀膜,晶圆加工和芯片安装技术。在过去几年里, BATOP 已成为一个用于被动锁模激光器的可饱和吸收体的世界领先的供应商。可饱和吸收产品集合了各式各样的不同的器件,从可饱和吸收镜(SAM™ ),到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止,可饱和吸收产品已经覆盖了800nm到2.6μm的常用激光波长范围。另一个产品系列是用于太赫兹发射和探测的太赫兹光电导天线(PCA)。BATOP不仅提供单带隙天线,还包括整合了微透镜的高能大狭缝交叉天线阵列和整套的太赫兹光谱仪。 太赫兹光电导天线的激发波长为800nm到1550nm之间。BATOP借助强大的研发能力来不断提高自己的产品, 我们始终和客户在一起,最好的满足他们的需求。产品介绍MC – 反射模式微芯片 The Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.Part No.Delivery timeDescriptionMC-1064-100ps1 weekMicrochip in reflection mode λ = 1064 nm, pulse duration ~ 100 ps, pulse energy ~ 20 nJ, repetition rate 80 kHz - 700 kHz pump wavelength 808 nmMC-1064-240ps1 weekMicrochip in reflection mode λ = 1064 nm, pulse duration ~ 240 ps, pulse energy ~ 30 nJ, repetition rate 50 kHz - 800 kHz pump wavelength 808 nmMCT – 传输模式微芯片 The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).The laser output beam is in the same direction as the pump beam.The laser output is linear polarized.Part No.Delivery timeDescriptionMCT-1064-90ps1 weekMicrochip in transmission mode λ = 1064 nm, pulse duration ~ 90 ps, pulse energy ~ 100 nJ, repetition rate 20 kHz - 400 kHz pump wavelength 808 nmMCT-1064-220ps1 weekMicrochip in transmission mode λ = 1064 nm, pulse duration ~ 220 ps, pulse energy ~ 160 nJ, repetition rate 20 kHz - 400 kHz pump wavelength 808 nm 反射模式微芯片品牌: BATOP型号: MC-1064-100ps BATOP GmbH成立于2003年,是一家隶属于德国耶拿大学的私人创新型公司。BATOP从事的专业领域包括:低温分子束外延技术,介质溅射镀膜,晶圆加工和芯片安装技术。在过去几年里, BATOP 已成为一个用于被动锁模激光器的可饱和吸收体的世界领先的供应商。可饱和吸收产品集合了各式各样的不同的器件,从可饱和吸收镜(SAM™ ),到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止,可饱和吸收产品已经覆盖了800nm到2.6μm的常用激光波长范围。另一个产品系列是用于太赫兹发射和探测的太赫兹光电导天线(PCA)。BATOP不仅提供单带隙天线,还包括整合了微透镜的高能大狭缝交叉天线阵列和整套的太赫兹光谱仪。 太赫兹光电导天线的激发波长为800nm到1550nm之间。BATOP借助强大的研发能力来不断提高自己的产品, 我们始终和客户在一起,最好的满足他们的需求。产品介绍MC – 反射模式微芯片(Microchip in reflection mode)Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.Part No.Delivery timeDescriptionMC-1064-100ps1 weekMicrochip in reflection mode λ = 1064 nm, pulse duration ~ 100 ps, pulse energy ~ 20 nJ, repetition rate 80 kHz - 700 kHz pump wavelength 808 nm微芯片参数:MC-1064-100psOptical Pump ParametersParameter at T=25°CMin.Typ.Max.Wavelength806nm808nm810nmPump Power70150mW-200mW300mWPump Spot Diameter25μm40μm60μmFluorescent Lifetime 35 μs (3%) Pump Absorption @ 808nm85%90%95%Pump Power Density5 kW/cm2 24 kW/cm2 *Lasing performance with 40μm pump spot size at 25°CParameter at T=25°CMin.Typ.Max.Laser Wavelength1064.0nm1064.3nm1064.6nmLaser Wavelength Drift 50 pm/100mW** Beam Waist Diameter60 μm 100 μmM21.11.31.5Pulse Energy15 nJ18 nJ21 nJPulse Duration70ps100ps130psDifferential Efficiency8%10%13%Laseing Thresold100 mW110 mW120 mWPolarization Extinction Ratio 100 frep75 kHz 700 kHzPav (150mW)3,0 mW4,0 mW5,0 mWPav (200mW)7,5 mW9,0 mW10,5 mWThe average output power P and the repetition frequency fR are a function of the optical pump power.These dependencies are nearly linear above the laser threshold. The jitter of the repetition frequencydecreases with increasing pump power to about 2 %, whereas the pulse energy EP remains constant?Dependency of the average output power P on the pump power at 808 nm?Dependency of the repetition rate frep on the pump power at 808 nmPulse duration tPPulse spectrum?Dependency of the relative frequency jitter on the repetition rate fR3.
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