三硫化锑

Antimony sulfide is the chemical compound with the formula Sb2S3 which crystallizes in an orthorhombic space group. Sb2S3 shares striking structural and physical similarities with topological insulator Sb2Te3. The orthorhombic phase of Sb2S3 belongs to the space group Pnma (number:62) Recently, Sb2S3 has been shown to exhibit topological state transition under pressure [1]. Sb2S3 crystals exhibit optical band gap at 1.7 -1.8 eV [2] while optical and electronic properties in the monolayer form remain unknown.Sb2S3 crystals measure ~0.5 cm or larger in size, rated at 99.9998% purity, and exhibit strong and sharp Raman signal, ideal environmental stability, and high crystalline order. Crystals are synthesized through flux zone technique to high high crystallinity and enable exfoliation.Overall characteristics Topological insulatorHigh electron mobility semiconductor2D anisotropic semiconductorReferences[1] "Pressure-induced electronic topoalogical transition in Sb2S3" Journal of Physics: Condensed Matter, 1 (28) 015602[2] "First-principles study of the lattice dynamics of Sb2S3" Phys. Chem. Chem. Phys., 2014,16, 345-350

二硫化钼晶体（天然） MoS2(Molybdenum Disulfide)晶体结构：六边形类型：天然晶体尺寸：~10mm-20mm纯度：99% 属性：半导体

参数：制备方法：锂基插层法组成：单层二硫化钨外观：黑色粉末或分散体直径：0.1-4um厚度：1纳米单分子层比例：95%Parameter:Preparation Method：Lithium-based Intercalation MethodComposition: Monolayer Tungsten disulfideAppearance: Black Powder or dispersionDiameter: 0.1-4 μmThickness: ～1 nmMonolayer ratio: =95%

二硫化钛晶体 TiS2(Tantalum Sulfide) 晶体结构：六边形晶体尺寸:~10毫米电学性能：半金属，逆磁性晶体结构：六边形晶胞参数：a = b = 0.340 nm, c = 0.570 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a TiS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4Stoichiometric analysis of a single crystal TiS2 by Energy-dispersive X-ray spectroscopy (EDX).Powder X-ray diffraction (XRD) of a single crystal TiS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Raman spectrum of a single crystal TiS2. Measurement was performed with a 785 nm Raman system at room temperature.

参数：制备方法：锂基插层法组成：单层二硫化钼外观：黑色粉末或分散体直径：0.2~5um，主要集中在1um-3um厚度：1纳米单分子层比例：95%Parameter:Preparation Method：Lithium-based Intercalation MethodComposition:Monolayer Molybdenum disulfideAppearance: Black Powder or dispersionDiameter: 0.2-5 μm, mainly concentrate in 1μm-3μmThickness: ～1 nmMonolayer ratio: =95%

1、企业介绍泰州巨纳新能源有限公司：巨纳集团(Sunano Group)是能源行业的知名品牌。泰州巨纳新能源有限公司(Sunano Energy)是国内最早的从事石墨烯制备、性能检测及应用产品开发的公司之一，注册资本11000万元，有办公用房300多平方米，厂房和洁净室3000多平方米。核心研发团队主要由国内外知名高校博士组成，部分成员来自于2010年诺贝尔物理学奖小组，项目技术处于国际领先地位，在石墨烯领域拥有专利30余项。企业管理团队有丰富的成功创业经验，创新意识强，公司客户遍布全球。2、高质量二维晶体材料简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料。巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合荷兰HQ Graphene为全球客户提供高质量的类石墨烯二维晶体材料，并提供定制服务，以满足客户的不同需求。 名称：二硫化钛（TiS2） 纯度：＞99.995% 尺寸：~10 mm 属性：半金属

产品特点：防爆盘三通（不锈钢和硫化物处理）Rupture Disk Tee (Stainless Steel & Sulfinert Treated)与其他设计不同，Alta-Robbins破裂盘三通不会永久焊接到磁盘上，使磁盘可以更换。 无需从气缸上拆下阀门或三通即可轻松更换磁盘。 这些T形接头设计用于安装在现有系统中，以提供可靠的过压保护。订货信息：Rupture Disk Tee (Stainless Steel & Sulfinert Treated)Catalog #MaterialPressure RatingUnits26318Stainless Steel1,800 psigea.26319Sulfinert-Treated1,800 psigea.26322Stainless Steel2,850 psigea.26323Sulfinert-Treated2,850 psigea.

带 pH 玻璃膜的组合式银环形电极，用作参比电极。银环具有硫化物 (Ag2S) 涂层，其适用于较高的灵敏度和更好的指示极限。该免维护电极适用于 pH 值恒定的沉积滴定（硝酸银滴定剂），例如： 氯化物、溴化物、碘化物硫化物硫化氢硫醇氰化物该电极存放在蒸馏水中。

二硫化钨钼晶体 MoWS2(Molybdenum Tungsten Disulfide alloy)晶体尺寸：~6毫米电学性能：半导体晶体结构：六边形晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ =120° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a MoWS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Stoichiometric analysis of a single crystal MoWS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal MoWS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal MoWS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

二硫化钽晶体(1T) TaS2(Tantalum Sulfide) -1T晶体尺寸：~8毫米电学性能：半导体，电荷密度波（CDW），Mott相晶体结构：六边形晶胞参数：a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

参数：制备方法：锂基插层法组成：单分子层，具有小尺寸的二硫化物外观：黑色粉末或分散体直径：20-500 nm，主要集中在100-200 nm厚度：1纳米单分子层比例：95%Parameter:Preparation Method：Lithium-based Intercalation MethodComposition: Monolayer Tungsten disulfide with small sizeAppearance: Black powder or dispersionDiameter: 20-500 nm, mainly concentrate in 100-200 nmThickness: ～1 nmMonolayer ratio: =95%

参数：制备方法：锂基插层法组成：单分子层，具有小尺寸的二硫化物外观：黑色粉末或分散体直径：20-500 nm厚度：1纳米单分子层比例：95%Parameter:Preparation Method：Lithium-based Intercalation MethodComposition: Monolayer Tungsten disulfide with small sizeAppearance: Black powder or dispersionDiameter: 20-500 nmThickness: ～1 nmMonolayer ratio: =95%

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。硫化锗GeS

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。硫化砷As?S?

1．将单层硫化钼转移至衬底（衬底可根据客户需求选定）2．边长15um （三角形）片内层数均匀3．衬底上转移3个（数量可定制）带电极的单层硫化钼样品4．电极间距：~5um光学图片SEM表征图SEM表征图（全貌）拉曼测试图PL测试图

二硫化铼晶体 ReS2 (Rhenium Disulfide)晶体结构：三斜晶晶体尺寸：~8毫米电学性能：N型半导体晶体结构：三斜晶系晶胞参数：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

二硫化钼晶体（天然） MoS2(Molybdenum Disulfide)晶体结构：六边形类型：天然晶体尺寸：~10mm-20mm纯度：99%属性：半导体

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。硫化镓Gallium Sulfide (GaS)

Ag（银）Titrode，带硫化涂层 订货号: 6.0430.100S用于沉淀滴定法，不更改 pH 值。硫化涂层允许较低的指示极限 隔膜Diaphragm type电极插头Metrohm plug-in head G指示电极形式Ring/hemisphere指示电极类型Ag分接元件类型-测量范围-2000...2000测量单位mV最小浸没深度（mm）20磨口套管灵活下部杆径（mm）12上部杆径（mm）12电极杆材料Glass长时温度范围（°C）0...80短时温度范围（°C）0...80

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化铪HfS?

硫化镓晶体 GaS(Gallium Sulfide)晶体尺寸：~10毫米电学性能：半导体晶体结构：六边形晶胞参数：a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995% X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.

安徽硫化物测定装置硫化物测定装置

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化钛Titanium Disulfide (TiS?)

二硫化钨晶体 2H-WS2(Tungsten Disulfide)晶体结构：六边形晶体尺寸：~10毫米电学性能：N型半导体晶体结构：六边形晶胞参数：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化铼Rhenium Disulfide (ReS?)

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化锆Zirconium Disulfide (ZrS?)

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化钨Tungsten Disulfide (WS?)

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化钨钼Molybdenum Tungsten Disulfide (MoWS?)

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化铌Niobium Disulfide (NbS?)

简介：二维晶体材料指的是以石墨烯为代表的单原子层及少数原子层厚度的晶体材料，巨纳集团除了提供石墨烯材料、设备、检测等一体化服务外，还联合美国2D Semiconductors为全球客户提供高质量的二维晶体材料、粉体、溶液、薄膜等材料，并提供定制服务，以满足客户的不同需求。二硫化钽Tantalum Disulfide (TaS?)