固态材料中的核自旋既是消相干的原因也是自旋比特的来源。在这项工作中,芝加哥大学David D. Awschalom通过在碳化硅(SiC)中控制单个的29Si核自旋,在一个具有光学活性的空位自旋和强耦合的核寄存器之间创造了一个纠缠态。此外,作者还展示了如何利用SiC的同位素加工来实现弱耦合核自旋的控制,并提出了一种性原理计算方法来预测优同位素分数,使可用核存储器的数量大化。总的来说,作者展示了在固态系统中控制核环境的重要性,实现了工业尺度材料中的单光子发射器与核寄存器的连接。
Thromboembolic events caused by implanted cardiovascular devices present seriouschallenges to surgeons and researchers alike. In particular bileaflet mechanical heartvalves are prone to thrombus formation in the hinge region due to a combination of highshear stress and stagnation regions. Shear-induced platelet activation and aggregation isusually studied using viscometers, parallel plate flow, and other non-physiologic in vitroconfigurations. However, it is desirable to study this phenomenon in a more physiologicalenvironment.