以下都是我可以在谷歌找到出处，可是都没法下载，我公司没有数据库，谢谢大家了！ 1. 作者：Kazunari Kurita and Takayuki Shingyouji 题目：Identification and Quantification of Transition Metal Impurities in Czochralski Silicon Wafers using Microwave Photoconductive Decay Lifetime Measurements 卷期：Received June 19, 1998; accepted for publication Auguest 31, 1998 链接：http://jjap.ipap.jp/link?JJAP/37/5861/ 2. 作者：Hidetaka Takato, Isao Sakata and Ryuichi Shimokawa 题目：Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment 卷期：Received July 4, 2001; accepted for publication August 16, 2001 链接：http://jjap.ipap.jp/link?JJAP/40/L1003/ ３． 作者：Steven Johnston, Richard Ahrenkiel, Pat Dippo, Matt Page, Wyatt Metzger 题目：Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization 卷期： 链接：http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=8756&DID=195355&action=detail ４． 作者：J. Gervais, O. Palais, L. Clerc, and S. Martinuzzi
题目：Minority carrier lifetime scan map in crystalline silicon wafers 卷期：Rev. Sci. Instrum. 70, 4044 (1999); DOI:10.1063/1.1150032 Issue Date: October 1999 链接：http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=RSINAK000070000010004044000001&idtype=cvips&gifs=yes ５． 作者：H. Kageshima, A. Taguchi, K. Wada 题目：Theoretical Investigation Of Nitrogen-Doping Effect On Native Defect Aggregation Processes In Silicon 卷期： 链接：http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2531&DID=111963&action=detail ６． 作者：VON AMMON W. (1) ; HÖLZL R. (1) ; VIRBULIS J. (1) ; DORNBERGER E. (1) ; SCHMOLKE R. (1) ; GRÄF D. (1) 题目：The impact of nitrogen on the defect aggregation in silicon 卷期：Journal of crystal growth ISSN 0022-0248 CODEN JCRGAE 2001, vol. 226, no1, pp. 19-30 (42 ref.) 链接：http://cat.inist.fr/?aModele=afficheN&cpsidt=996929
The impact of nitrogen on the defect aggregation in silicon
赛默飞实验室产品焕新计划有奖调研！
【七月征文】不一YOUNG实验“猿”
报名开启：ICS2024第十三届光谱网络会议！
推荐收藏！盘点中药材及饮片检测解决方案
