1. 【作者】：J. M. Pearce, J. Deng, R. W. Collins, and C. R. Wronski 【题名】：Light-induced Defect States in Hydrogenated Amorphous Silicon Centered around 1.0 and 1.2 eV from the Conduction Band Edge 【期刊】： Applied Physics Letters 【年、卷、期、起止页码】：Vol. 83, No.18, pp3725-3727,2003.
2. 【作者】：G. Muller 【题名】：On the Generation and Annealing of Dangling Bond Defects in Hydrogenated Amorphous Silicon 【期刊】：App, pl. Phys. A 【年、卷、期、起止页码】：vol.45, pp. 41-51, 1988
3. 【作者】：A. Kolodziej 【题名】：Staebler-Wronski Effect in Amorphous Silicon and its Alloys 【期刊】：Opto-Electronics Review 【年、卷、期、起止页码】：12(1), pp. 21–32 ,2004
4. 【作者】：Kaichi Fukuda. NoBuo lmai. Shin-ichi Kawamura. Kunio Matsumura. Nobuki Ibaraki 【题名】：Switching Performance of High Rate Deposition Processing a-Si:H TFTs 【期刊】：Journal of Non-Crystalline Solids 【年、卷、期、起止页码】： pp.1137-1140,1996
5. 【作者】：Sandrine Martin, Jerzy Kanicki, Nicolas Szydlo, Alain-Rolland 【题名】：Analysis of the Amorphous Silicon Thin Film Transistors Behavior under Illumination 【期刊】： AM-LCD’ 【年、卷、期、起止页码】：1997
6. 【作者】：Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo 【题名】：The Correlation Between Deposition Parameters and Optoelectronic Properties in 1 Intrinsic Hydrogenated Amorphous Silicon 【期刊】：J.DA-YEH INST. TECH. 【年、卷、期、起止页码】：3 (1) pp.151-64, 1994
7. 【作者】：Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo 【题名】：Sensitizing States in Intrinsic Hydrogenated Amorphous Silicon and Their Effect on Photoconductivity 【期刊】：J.DA-YEH INST. TECH 【年、卷、期、起止页码】：2(1) pp.81-95, 1993
8. 【作者】：Yoshimi YAMAJI, Mitsushi IKEDA, Masahiko AKIYAMA and Takahiko ENDO 【题名】：Characterization of Photo Leakage Current of Amorphous Silicon Thin-Film Transistors 【期刊】：Japanese Journal of Applied Physics 【年、卷、期、起止页码】：Vol. 38, pp.6202–6206,1999
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