二硫化钼晶体（2H-合成/99.995%/n型） MoS2-syn-N ty

二硫化钼晶体（2H-合成/99.995%/n 型） MoS2(Molybdenum Disulfide)-syn
晶体尺寸:~10毫米
电学性能：N型半导体
晶体结构：六边形
晶胞参数：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.