GeS 硫化锗晶体 (Germanium Sulphide)

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. In the bulk form GeS is 1.65 eV indirect band gap semiconductor. Displays remarkable and unusual optical, mechanical, and electrical properties in the monolayers. Monolayer GeS remains unknown by the scientific community and waiting to be discovered. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.
GeS characteristics