用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3，以及砷As参杂多晶硅研究

用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3，以及砷As参杂多晶硅研究，Arsenic（As）-doped polycrystalline-silicon gate/HfO2 , HfO2–Al2O3, or Al2 O3–HfO2–Al2O3 / p-type Si（100） metal–oxide–semiconductor capacitors were fabricated using an atomic-layer-deposition technique to investigate the degree of As penetration and the electrical properties of various high-k gate dielectric stacks。