用原子层沉积系统生长SrTiO3以提高其电学特性

用原子层沉积系统生长（SrTiO3）STO薄膜，在370°C，生长速率0.15 Å/ cycle. The adoption of a thin crystallized seed layer resulted in crystallized perovskite STO films at the as-deposited state without higher temperature post-annealing. A tox of 0.72 nm（dielectric constant of 108）and a low leakage current density（10−7A/cm2 at 0.8 V）were obtained from a planar capacitor structure consisting of Pt/20-nm-thick STO/Ru（bottom）.