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利用等离子增强原子层沉积系统PEALD来沉积(Ge2Sb2Te5)GST薄膜,The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at 200°C showed a smooth surface morphology, highest density, and lowest impurity concentration.
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