方案摘要
方案下载应用领域 | 其他 |
检测样本 | |
检测项目 | |
参考标准 | 铁电 压电 |
Neodymium-doped Bi4Ti3O12 ~BNT! films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12 , and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx /SiO2 /Si substrates. Nd substitution promoted random orientation with low ~00l! diffraction peaks. The 1- mm-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 mC/cm2. Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.431024 under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.
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