型号: | 4H-SiC上镀4H-SiC薄膜 P 型 |
产地: | 美国 |
品牌: | 合肥科晶 |
评分: |
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产品名称: | 4H-SiC上镀4H-SiC薄膜P型(4H-SiC?Epitaxial?Film?on?4H-SiC,?P?type) |
常规尺寸: | dia4" ±0.5 mm x 0.525 ±0.025 mm |
技术参数: | 4H-SiC薄膜晶向:<0001> 4H-SiC薄膜厚度(film target thickness):4.3um ±10% 4H-SiC薄膜厚度(film target doping layer) :1.4E17/cc +0% /- 30% 载流子浓度:(3~ 10)E16 /cc 导电类型:P型 抛光情况:双面抛光 4H-SiC基片晶向:<0001>miscut 8.0 +/- 0.5 degree,parallel(10-10);OF length: 15.9 +/- 1.7 mm 4H-SiC基片尺寸: dia 2 inch x330±25unIF orientation :90 degree cw. from OF +/- 5 degreeIF length:8.0 +/- 1.7 mm 4H-SiC基片电阻率:< 0.03 ohm-cm 4H-SiC抛光:Si面CMP单抛边缘排除:1mm
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标准包装: | 1000级超净室100级超净袋真空包装或单片盒装 |
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