| 型号： | QP45-Q |
| 产地： | 浙江 |
| 品牌： | 新势力光电 |
| 评分： |
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Quadrant photodiodes (low dark current)
|
|||||
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Type No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP1-6
|
TO52
|
Ø 1.13
|
1
|
0.1
|
10
|
|
QP5-6
|
TO5
|
Ø 2.52
|
5
|
0.2
|
10
|
|
QP5.8-6
|
TO5
|
2.4x2.4
|
5.8
|
0.4
|
20
|
|
QP10-6
|
TO5
|
Ø 3.57
|
10
|
0.4
|
15
|
|
QP20-6
|
TO8S
|
Ø 5.05
|
20
|
1
|
20
|
|
QP50-6
|
TO8S
|
Ø 7.8
|
50
|
2
|
40
|
|
QP100-6
|
LCC10S
|
Ø11.2
|
100
|
4
|
50
|
|
Quadrant photodiodes (fully depletable)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP100-7
|
LCC10
|
10x10
|
4x25
|
0.5
|
50
|
|
Quadrant photodiodes (for 1064nm)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP22-Q
|
TO8S
|
Ø 5.3
|
4x5.7
|
1.5
|
5
|
|
QP45-Q
|
TO8S
|
6.7x6.7
|
4x10.96
|
3
|
5
|
|
QP154-Q
|
TO1032i
|
Ø 14.0
|
4x38.5
|
10
|
6
|
光电二极管(PIN)
雪崩二极管(APD)
铟镓砷探测器(InGaAs)
位敏探测器(PSD)
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