| 型号： | PVI-5-1×1-TO39-NW-36 |
| 产地： | 波兰 |
| 品牌： | VIGO |
| 评分： |
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1.2 PVI-5-1×1-TO39-NW-36
1.2.1 2.4 – 5.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector
PVI-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for maximum performance at 5 µm. The detector element is monolithically integrated with hyperhemispherical GaAs microlens to improve the performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.
Spectral response (Ta = 20°C, Vb = 0 mV)
1E+11
1E+10
1E+09
2 2,5 3 Wav3e,5length, 
m 4,5 5 5,5
Exemplary spectral detectivity, the spectral response of delivered devices may differ.
Specification (Ta = 20°C, Vb = 0 mV)
Parameter | Detector type |
PVI-5-1x1-TO39-NW-36 | |
Active element material | epitaxial HgCdTe heterostructure |
Cut-on wavelength λcut-on (10%), µm | 2.4±0.5 |
Peak wavelength λpeak, µm | 4.2±0.5 |
Optimum wavelength λopt, µm | 5.0 |
Cut-off wavelength λcut-off (10%), µm | 5.5±0.3 |
Detectivity D*(λpeak), cm·Hz1/2/W | ≥3.0×1010 |
Detectivity D*(λopt), cm·Hz1/2/W | ≥1.0×1010 |
Current responsivity Ri(λpeak), A/W | ≥2.0 |
Current responsivity Ri(λopt), A/W | ≥1.0 |
Time constant τ, ns | ≤150 |
Resistance R, Ω | ≥100 |
Optical area AO, mm×mm | 1×1 |
Package | TO39 |
Acceptance angle Φ | ~36° |
Window | none |
Features
• Wide dynamic range
• Convenient to use
• Very small size
• Cost-effective solution
• Quantity discounted price
• Fast delivery
Applications
• Contactless temperature measurements (railway transport, industrial and laboratory processes
monitoring)
• Flame and explosion detection
• Threat warning systems
• Gas detection, monitoring, and analysis (CO, CO2, NOx)
• Breath analysis
• Solids analysis
• Leakage control in gas pipelines
• Combustion process control
Mechanical layout, mm
Parameter | Value |
Immersion microlens shape | hyperhemisphere |
Optical area AO, mm×mm | 1×1 |
R, mm | 0.8 |
A, mm | 2.4±0.2 |
Φ – acceptance angle, R – hyperhemisphere microlens radius, A – distance from the bottom of hyperhemisphere microlens to the focal plane
Precautions for use and storage
Bottom view
Function | Pin number |
Detector | 1, 2 |
Reverse bias (optional) | 1(–), 2(+) |
Chassis ground | 3 |
• Standard ohmmeter may overbias and damage the detector. The bias of 10 mV can be used for resistance measurements.
• Operation in 10% to 80% humidity and -20°C to 30°C ambient temperature.
• Beam power limitations for optically immersed detector:
o irradiance with CW or single pulse longer than 1 μs irradiance on the apparent optical active area must not exceed 2.5 W/cm2,
o irradiance of the pulse shorter than 1 μs must not exceed 10 kW/cm².
• Storage in a dark place with 10% to 90% humidity and -20°C to 50°C ambient temperature.
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