仪器对比
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仪器应用：
Isotropic dry etching of polymer (photo resist)
Cleaning of silicon (or glass) wafer surface
Removal of native oxide on wafer
技术参数：
Sample size & throughput : 4 ~ 8inch, Single wafer
RF power : 600W @13.56MHz, Auto matching control
Substrate chuck : Heating or Cooling available (selectable)
Process gas : O2, CF4 ,Ar, N2
Gas supply method : Showerhead type
Ultimate pressure : ≤ 5×10-3Torr
Vacuum pump : Rotary pump
Process control : Auto process control (PLC)
常用工艺参数：
Photoresist Etch
| gas | 100% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 997 angstroms/min |
| uniformity | +/- 5% |
Nitride Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 450 angstroms/min |
| uniformity | +/- 5% |
BiPolar Silicon Glass (BPSG) Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 520 angstroms/min |
| uniformity | +/- 5% |
PolySilicon Glass (PSG) Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 450 angstroms/min |
| uniformity | +/- 5% |
Oxide Etch (SiO2)
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 200 angstroms/min |
| uniformity | +/- 10% |
Aluminum Etch*
| gas | 80% BCl3 /20% Cl2 |
| operating pressure | 150 millitorr |
| power level | 150 watts |
| etch rate | 200 angstroms/min |
| uniformity | +/- 5% |
等离子体去胶机（高性价比）信息由科睿技术发展有限公司为您提供，如您想了解更多关于等离子体去胶机（高性价比）报价、型号、参数等信息，欢迎来电或留言咨询。
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