Ekspla1000nm波长激光驱动THz发射器和接收器THz-1000_价格

1000nm波长激光驱动THz发射器和接收器

参考价：面议

型号：

THz-1000

产地：

其他国家

品牌：

Ekspla

评分：

产品详情

Features

Low temperature (LT) grown GaBiAs dipole structure
Optimized for lasers with 1030 nm and shorter wavelength (cost effective)
Wide spectral range 0.2-5 THz
Build-in hemispherical high-resistivity silicon lens

Applications

THz time domain spectroscopy
THz imaging
Optical pump – THz probe spectroscopy

THz emitter

THz emitter from LT GaBiAs epitaxial layer has on its surface a coplanar Hertzian dipole type antenna structure with a width of 70 µm, the width of the photosensitive gap is 20 µm. GaBiAs layer is mesa-et ched in order to achieve high dark resistance and to simplify the laser beam alignment. High photosensitivity of the material allows to use for the excitation very low average power generated by, e.g., femtosecond fiberlasers. The efficiencyof the optical to THz power conversion reaching 0.0007 is larger than for other photoconductive THz devices.

Average THz power as a function on the bias on GaBiAs emitter measured by the Golay cell

THz Detector

THz detectors manufactured from newly developed GaBiAs epitaxial layers can be used for in TDS systems activated by 1060 nm and shorter wavelength laser pulses. High electron mobility (~5000 cm2/Vs) in the layer guaranties excellent sensitivity of the device; due to the shorter than 0.5 ps electron lifetime the detector is sensitive in the frequency range from 200 GHz to 5 THz. Detector is mounted together with 15 mm diameter hemispherical lens from high-resistivity silicon in an opto-mechanical holder with in-plane micro positioning capability and SMA connector.

1000nm波长激光驱动THz发射器和接收器信息由北京欧兰科技发展有限公司为您提供，如您想了解更多关于1000nm波长激光驱动THz发射器和接收器报价、型号、参数等信息，欢迎来电或留言咨询。除供应1000nm波长激光驱动THz发射器和接收器外，北京欧兰科技发展有限公司还可为您提供Ekspla T-SPEC 实时太赫兹（THz）光谱仪等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。