少子寿命测试仪

仪器简介：少子寿命测试仪性能参数：

测量原理 QSSPC（准稳态光电导）
少子寿命测量范围 100 ns-10 ms
测试模式：QSSPC,瞬态，寿命归一化分析
电阻率测量范围 3–600 (undoped) Ohms/sq.
注入范围：1013-1016cm-3
感测器范围 直径40-mm
测量样品规格 标准直径: 40–210 mm （或更小尺寸）
硅片厚度范围 10–2000 μm
外界环境温度 20°C–25°C
功率要求 测试仪: 40 W 电脑控制器：200W 光源：60W
通用电源电压 100–240 VAC 50/60 Hz

主要特点:
　　适应低电阻率样片的测试需要，最小样品电阻率可达0.1ohmcm
　　全自动操作及数据处理
　　对太阳能级硅片，测试前一般不需钝化处理
　　能够测试单晶或多晶硅棒、片或硅锭
　　可以选择测试样品上任意位置
　　能提供专利的表面化学钝化处理方法
　　对各道工序的样品均可进行质量监控：
　　硅棒、切片的出厂、进厂检查
　　扩散后的硅片
　　表面镀膜后的硅片以及成品电池

少子寿命测试仪

Best available calibrated measurement of carrier recombination lifetime. Widely used for both monocrystalline and multicrystalline wafers.

Product Overview


WCT testers showcase our unique measurement and analysis techniques, including the highly regarded Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.

The QSSPC technique is ideal for monitoring multicrystalline wafers, dopant diffusions, and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument.

The QSSPC lifetime measurement also yields the implied open-circuit voltage (versus illumination) curve, which is comparable to an I-V curve at each stage of a solar cell process.


WCT System Capabilities


Primary application:

Step-by-step monitoring and optimization of a fabrication process.

Other applications:

　

Sinton Instruments' analysis yields a calibrated carrier injection level for each wafer, so you can interpret lifetime data in a physically precise way. Specific parameters of interest are displayed and logged for each measurement.




• Monitoring initial material quality

• Detecting heavy metals contamination during wafer processing

• Evaluating surface passivation and emitter dopant diffusion

• Evaluating process-induced shunting using the implied I-V measurement

Further Information

技术参数：

FAQ:

• What is the recombination lifetime?

• How does the solar cell efficiency depend on the lifetime?

• What determines the lifetime in silicon?

• How is lifetime measured by the Sinton Instruments tools?

• How is the data analyzed?

• Can you measure surface recombination velocity?

• Does the system measure emitter saturation current density?

• Can wafers be measured with no surface passivation (“out of the box”)?

• Can any of these instruments do lifetime maps?

• How do these measurements compare to microwave PCD?

• What lifetimes can be measured?

• What is the smallest sample size?

• How do you measure bulk lifetime on blocks or ingots?

• At what carrier density should I report the result?

• Can the lifetime tester be used to detect Fe contamination?

• How is the instrument calibrated?

• When should wafers be tested inline?

• Does the lifetime tester measure the trapping?
　

Module and Cell Flash Testers frequently asked questions

主要特点：

常见问题：

WT-2000与WCT-120测少子寿命的差异？

WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导）而WT2000是微波光电导。



WCT-120/100准稳态光电导法测少子寿命的原理？



WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导）