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Invited talk: Conduction Atomic Force Microscopy for Gate Dielectric Reliability Analysis<br>特邀报告：用于栅极介电可靠性分析的导电原子力显微镜

Conduction AFM (CAFM) is used to measure localized electrical properties of wide range of materials and emerging nanoscale devices. In this talk, we will present some of the recent works to probe the nanoscale electrical defects, measure charge transport and understand mechanisms of dielectric breakdown in both conventional and emerging 2D dielectric materials (e.g. SiO2, HfO2, h-BN). Some of the practical applications of the CAFM for emerging non-volatile memory will also be shown. Finally, we will show an approach which can be used to quantify thermal drift in CAFM based time dependent spectroscopy measurements and describe an approach which can be used to prolong the dwell time of the CAFM tip at a location.

483 2020-12-30

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