【序号】：1 【作者】：Barry Brennan1,a), Marko Milojevic1, Roccio Contreras-Guerrero2, Hyun-Chul Kim3, Maximo Lopez- Lopez4, Jiyoung Kim5 and Robert M. Wallace5,b) 【题名】：Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs 【期刊】：J. Vac. Sci. Technol. B 【年、卷、期、起止页码】：30, 04E104 (2012) 【全文链接】http://scitation.aip.org/content/avs/journal/jvstb/30/4/10.1116/1.4721276 【序号】：2 【作者】：Duo Cao1,a), Xinhong Cheng1, Tingting Jia1, Dawei Xu1, Zhongjian Wang1,Chao Xia1, Yuehui Yu1 and DaShen Shen2 【题名】：Characterization of HfO2/La2O3 layered stacking deposited on Si substrate 【期刊】：J. Vac. Sci. Technol. B 【年、卷、期、起止页码】：31, 01A113 (2013) 【全文链接】http://scitation.aip.org/content/avs/journal/jvstb/31/1/10.1116/1.4770497
【序号】：3 【作者】：Jan Ingo Flege1,a), Björn Kaemena1, Thomas Schmidt1 and Jens Falta1 【题名】：Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon 【期刊】：J. Vac. Sci. Technol. B 【年、卷、期、起止页码】：32, 03D124 (2014) 【全文链接】http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4876122 【序号】：4 【作者】：Booyong S. Lim1, Antti Rahtu1 & Roy G. Gordon1 【题名】：Atomic layer deposition of transition metals 【期刊】：Nature Materials 【年、卷、期、起止页码】：2, 749 - 754 (2003) 【全文链接】http://www.nature.com/nmat/journal/v2/n11/abs/nmat1000.html 【序号】：5 【作者】：Javey A1, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. 【题名】：High-k dielectrics for advanced carbon-nanotube transistors and logic gates. 【期刊】：Nature Materials 【年、卷、期、起止页码】：2002 1(4):241-6. 【全文链接 http://www.ncbi.nlm.nih.gov/pubmed/12618786?dopt=AbstractPlus=AbstractPlus
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