NA-EDS for TEM-半导体

2018/01/08   下载量： 15 次

方案摘要

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应用领域 半导体
检测样本 其他
检测项目
参考标准 无

Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM. Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis. TEM Semiconductor Mapping in the TEM Solving peak overlaps in real-time Application Brief

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Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental

composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM.

Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental

analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements

and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap

with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to

achieve an accurate elemental analysis.

TEM Semiconductor Mapping in the TEM

Solving peak overlaps in real-time

Application Brief

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牛津仪器科技（上海）有限公司
白金会员 丨 第23年
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