商用铁电存储器（FRAM）单粒子事件效应及应用中子诱导位移破坏的缓解技术

2019/02/01   下载量： 2 次

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应用领域 电子/电气
检测样本 电子元器件产品
检测项目
参考标准 暂无

采用立陶宛Ekspla公司的PL2210型脉冲皮秒激光器做光源。通过SPELS公司的单粒子事件模拟测试系统。对商用铁电存储器（FRAM）单粒子事件效应及应用中子诱导位移破坏的缓解技术进行了实验研究。

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The single event effects (SEE) in commercial Ferroelectric Random Access Memory (FRAM) were investigated using heavy-ion and pulsed laser. Stable data upsets affecting one to several rows and transient data upsets affecting hundreds to even thousands of rows were both observed, and the corresponding sensitive regions were identified. Further research provides evidence that the transient micro-latch-up event in the peripheral circuits based on complementary metal oxide semiconductor (CMOS) process is a main cause of the transient data upsets. Moreover, neutron irradiation is performed in order to mitigate the upsets caused by transient micro-latch-up. Due to the reduction of the current gains of the parasitic bipolar transistors by neutron-induced displacement damage, transient micro-latch-up as well as the resulting data upsets was suppressed.

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北京欧兰科技发展有限公司
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